silicon oxide

...a thin layer of silicon oxide...

一层薄薄的氧化硅

《柯林斯高阶英汉双解学习词典》

During annealing process, the substrate is also oxidized, which induces a thin layer of silicon oxide existing at the interface of ZnO/ SiC.

在氧气氛中退火时，衬底也会轻度氧化，从而导致在ZnO/SiC界面处存在一层很薄的Si的氧化层。

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Moreover, high-temperature thermal storage materials with improved thermal shock resistance and increased thermal storage capacity are prepared by doping in-situ synthesized cordierite with silicon carbide, zirconium oxide and mullite.

在原位合成堇青石基础上，通过添加碳化硅、氧化锆、红柱石、莫来石及采用原位合成莫来石方法进一步提高堇青石材料的抗热震性能和储热性能。

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Bulk sample electrolysis results show that magnesium silicate, silicon oxide, calcium sulfide, sodium oxide inclusions in the main sizes of 100~ 400 μ m exist in high-carbon steel.

大样电解结果显示，高碳钢中主要有尺寸在100～400μm左右的硅酸铝镁、氧化硅、硫化钙、氧化钠夹杂。

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The mechanisms and optimal parameters of rapid thermal annealing of high dose implanted silicon, fabrication of shallow PN junctions, formation of silicide, reflow of BPSG and RTN of ultrathin oxide films have been discussed from a comprehensive point of view.

包括：RHT设备，高剂量注入硅的RTA机理与最佳RTA条件选择，以及浅PN结制造，硅化物形成，BPSG回流和薄氧化层的快速氮化等RTP技术。

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Silicon oxide ion barrier film was successfully fabricated on the input-face of microchannel plate by magnetron sputtering method.

本文利用射频磁控溅射方法，在微通道板输入面上成功地制备出二氧化硅防离子反馈膜。

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this technique is fully compatible with conventional cmos processes by employing silicon oxide and photoresist to mask thick aluminum film during dry etching.

这种技术利用氧化硅和光刻胶双层复合掩模来掩蔽厚铝的干法刻蚀，完全兼容于CMOS工艺；

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In recent years, lots of non-contact processes such as oblique vapor deposition of silicon oxide, ion beam alignment and photo-alignment have been came up to solve these problems.

为了解决这些问题，近年来已有不少非接触式取向方式被提出，比如在斜向蒸镀氧化硅、离子束取向、光取向等。

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with the increase of adulterated silicon oxide, the breakdown strength and thermal decomposition temperature of hybrid pi films increase.

随着纳米硅氧化物掺杂量的增加，聚酰亚胺杂化薄膜的击穿场强和热分解温度也相应的提高。

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OBJECTIVE To develop oral mucosal ointment of organic silicon oxide and evaluate its matrix.

目的研制有机硅氧化物类口腔黏膜药膏及对其基质进行评价.

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The experiment, the preparation of the active silicon oxide and the test of properties, is designed for the inorganic chemical experiment in Department of Chemistry.

本文介绍的活性二氧化硅的制备及性质实验是为化学专业无机化学实验课而设计的一个综合性实验。

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photoluminescence from er-doped silicon-rich silicon oxide film and er-doped silicon-rich silicon nitride film and its annealing behavior

室温下掺Er富硅氧化硅和掺Er富硅氮化硅的光致发光及其退火

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Progress of photocatalysts of composite titanium-silicon oxide

钛硅复合氧化物光催化剂的研究进展

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The crystal structure being investigated is designed using tungsten ( W) and silicon oxide ( SiO_2). The spectral characteristics are simulated based on Maxwell equations by our method.

采用钨（W）和二氧化硅（SiO2）设计了一维金属-介质光子晶体，从麦克斯韦方程组出发，研究了该一维结构的光谱特性。

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Crystal Growth of Bismuth Silicon Oxide ( BSO) in Space

硅酸铋（BSO）晶体的空间生长

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wherein, the silicon oxide layer and the silicon nitride layer can form an insulation layer.

二氧化硅层和氮化硅层构成绝缘层；

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XRD results show that the anatase phase of titanium dioxide films can be fabricated at 400 ℃, and at this temperature, the deposited tantalum oxide and silicon dioxide were amorphous.

对制备的薄膜进行XRD测试表明，在基片温度为400℃时能制备出TiO2薄膜晶体，结构为锐钛矿型，而在此温度下，SiO2和Ta2O5却只能得到非晶态的结构。

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